Microwave Devices: Device Circuit InteractionsD. V. Morgan, M. J. Howes Good,No Highlights,No Markup,all pages are intact, Slight Shelfwear,may have the corners slightly dented, may have slight color changes/slightly damaged spine. |
Contents
The Development of Solid State Microwave Devices | 1 |
TransferredElectron Devices | 8 |
Microwave Transistors | 147 |
Copyright | |
7 other sections not shown
Common terms and phrases
active amplifier applied approximately assumed avalanche base becomes bias calculated capacitance carrier cavity channel characteristic charge circuit collector components condition conductance constant decrease density dependence depletion determined device device line diffusion diode discussion doping drift effect efficiency electric field electron emitter energy epitaxial Equation factor frequency GaAs gain gallium arsenide gate give given Gunn heat higher IEEE impatt impedance impedance locus increase injection junction layer length limit load locking lower maximum measured metal microwave mode modulation negative noise noise figure obtained operating oscillator output output power peak performance phase positive possible practical pulse radar range ratio receiver reduced referred region resistance resonant saturation semiconductor shown in Figure shows signal silicon Smith chart solid space stability structure temperature thermal transistor transit tuning voltage wave width