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BASIC PROPERTIES OF INFRARED MATER ALS
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acceptor achieved alloys annealing Appl applications arrays band bulk cadmium calculated carrier carrier concentration cate CdTe characteristics compared composition concentration conduction crystal Crystal Growth curves defects density dependence deposited detector determined devices direction doping effect electrical electron energy epitaxial experimental Figure function furnace GaAs given grown growth Hall HgCdTe HgTe hole implantation impurity increases indicated infrared interface lattice layers lead Lett limited lower magnetic field material measurements melt mercury method mobility observed obtained optical orientation oscillations p-type parameters performed phase Phys Physics possible present pressure properties range reduced reflectance sample semiconductor shown shows signal silicon solid solution spectra structure subband substrates surface Table technique telluride temperature thickness transition values variation voltage wavelength