Materials and Technologies for Optical Communications: 19-20 November 1987, Cannes, FranceAlain P. Brenac |
Contents
EPITAXIAL PROCESSES | 23 |
TECHNOLOGIES AND DEVICES | 33 |
a review P Sudraud G Ben Assayag Groupement | 46 |
Copyright | |
5 other sections not shown
Common terms and phrases
absorption active layer annealing Appl AUGER recombination band gap calculated carrier concentration CdTe Chemical Vapor Deposition composition compounds Crystal growth dB/km defects deposition devices DH lasers diffusion diodes dislocations DMPE dopant double heterostructures Electron energy epilayers experimental fabrication fibers Figure fluoride fluoride glasses GaAlAsSb GaAs GaInAsP GaInAsSb GaSb GaSb substrate grown heterojunction heterostructure III-V implanted impurities InAs InAsSbP induced InGaAs intermixing ions junction lattice Lett liquid phase epitaxy loss material measured melt mercury MOCVD molecular beam epitaxy molecules obtained optical communications optical fiber optically nonlinear optoelectronic p-type parameters photodiodes photoluminescence Phys PICVD plasma porous glass preform quantum range reaction refractive index region room temperature sample semiconductor shown shows silica solid solution spectra SPIE structure sulphidation surface techniques ternary thermal thickness threshold current density undoped values vapor voltage waveguide wavelength ZrF4