Thin-Film Crystalline Silicon Solar Cells: Physics and Technology
This introduction to the physics of silicon solar cells focuses on thin cells, while reviewing and discussing the current status of the important technology. An analysis of the spectral quantum efficiency of thin solar cells is given as well as a full set of analytical models. This is the first comprehensive treatment of light trapping techniques for the enhancement of the optical absorption in thin silicon films.
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PHYSICAL LOSS MECHANISMS
ADVANCED QUANTUM EFFICIENCY ANALYSIS
TECHNOLOGICAL APPROACHES TO THINFILM CELLS
WAFFLE CELLS FROM THE POROUS SI PSI PROCESS
SUMMARY AND CONCLUSIONS
A2 Geometrical light trapping
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analytical Auger recombination average path length back reflectance back surface recombination back surface reflectance bandgap boundary recombination velocity calculated carrier recombination crystalline Si cells current density deposition device dielectric diffusion length doping effective diffusion length electron emitter energy enhancement epitaxial experimental fabrication film thickness front surface function grain boundary recombination hole concentration illumination injection level interface state density internal quantum efficiency Lambertian light trapping light trapping scheme maximum measured minority carrier minority carrier diffusion monocrystalline open-circuit voltage optical absorption oxide p-type parameters photogeneration photolithography photon photovoltaic planar polycrystalline porous power conversion efficiency PSI process quantum efficiency quasi-Fermi levels radiative recombination ray-tracing rays reciprocity theorem recombination rate reflector semiconductor Sgrb short-circuit current density shown in Figure silicon simulation solar cells space charge space charge region substrate surface recombination velocity temperature texture period thermal thickness Weff thin thin-film cells tion um-thick wafer waffle-shaped wavelength