Secondary Ion Mass Spectrometry: Applications for Depth Profiling and Surface Characterization
This book was written to explain a technique that requires an understanding of many details in order to properly obtain and interpret the data obtained. It also will serve as a reference for those who need to provide SIMS data. The book has over 200 figures and the references allow one to trace development of SIMS and understand the many details of the technique.
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American Vacuum Society Applied Surface Science atomic atoms/cm3 Benninghoven boron borophosphosilicate glass C.W. Magee carbon cesium charge neutralization Chichester concentration contamination count rate crater density depth resolution detected area detection limit deuterium dopant duoplasmatron electron beam F.A. Stevie GaAs H.W. Werner HgCdTe hydrogen implanted dose impurity insulator Interface Analysis ion beam Ion Bombardment ion implant Ion Mass Spectrometry ionization isotope Journal of Vacuum mass interferences mass spectrum material matrix metal molecular ions negative secondary ion nonuniform obtained oxygen oxygen flood percent positive secondary ions primary beam Primary Ion quadrupole quantification region reprinted with permission reproduced with permission sample rotation Science & Technology Secondary Ion Mass secondary ion yields sector instrument semiconductor shown in Figure shows SIMS analysis SIMS depth profile SIMS instruments sputtering rate sputtering yield Surface and Interface Surface Science technique TOFSIMS United Kingdom Vacuum Science versus voltage Wiley Wilson Wittmaack