Dispersion Relations in Heavily-Doped Nanostructures

Front Cover
Springer, Oct 26, 2015 - Technology & Engineering - 625 pages
This book presents the dispersion relation in heavily doped nano-structures. The materials considered are III-V, II-VI, IV-VI, GaP, Ge, Platinum Antimonide, stressed, GaSb, Te, II-V, HgTe/CdTe superlattices and Bismuth Telluride semiconductors. The dispersion relation is discussed under magnetic quantization and on the basis of carrier energy spectra. The influences of magnetic field, magneto inversion, and magneto nipi structures on nano-structures is analyzed. The band structure of optoelectronic materials changes with photo-excitation in a fundamental way according to newly formulated electron dispersion laws. They control the quantum effect in optoelectronic devices in the presence of light. The measurement of band gaps in optoelectronic materials in the presence of external photo-excitation is displayed. The influences of magnetic quantization, crossed electric and quantizing fields, intense electric fields on the on the dispersion relation in heavily doped semiconductors and super-lattices are also discussed. This book contains 200 open research problems which form the integral part of the text and are useful for graduate students and researchers. The book is written for post graduate students, researchers and engineers.
 

What people are saying - Write a review

We haven't found any reviews in the usual places.

Contents

Symbols
xlix
About the Author
liii
Part I Dispersion Relations in HDQuantum Wells Nano Wiresand Dots in the Presenceof Magnetic Field
2
1 The DRs in Low Dimensional HD Systems in the Presence of Magnetic Field
3
Part II Dispersion Relations in HD QuantumConfined Nonparabolic Materials
114
2 The DRs in Ultrathin Films UFs of Heavily Doped HD Nonparabolic Materials
117
3 The DRs in Quantum Wires QWs of Heavily Doped HD Nonparabolic Materials
209
4 The DRs in Quantum Dots QDs of Heavily Doped HD Nonparabolic Materials
242
12 The DR in Accumulation and Inversion Layers of Nonparabolic Semiconductors Under Magnetic Quantization
396
Part III The DR in Heavily Doped HDQuantum Confined Superlattices
407
13 The DR in QWHDSLs
409
14 The DR in Quantum Wire HDSLs
433
15 The DR in Quantum Dot HDSLs
442
16 The DR in HDSLs Under Magnetic Quantization
451
17 The DR in QWHDSLs Under Magnetic Quantization
471
Part IV Dispersion Relations in HD KaneType Semiconductors in the Presenceof Light Waves
478

5 The DR in Doping Superlattices of HD Nonparabolic Semiconductors
269
6 The DR in Accumulation and Inversion Layers of Nonparabolic Semiconductors
285
7 The DR in Heavily Doped HD Nonparabolic Semiconductors Under Magnetic Quantization
307
8 The DR in HDs Under CrossFields Configuration
345
9 The DR in Heavily Doped HD Nonparabolic Semiconductors Under MagnetoSize Quantization
365
10 The DR in Heavily Doped Ultrathin Films HDUFs Under CrossFields Configuration
379
11 The DR in Doping Superlattices of HD Nonparabolic Semiconductors Under Magnetic Quantization
387
18 The DR Under Photo Excitation in HD Kane Type Semiconductors
481
Part V Dispersion Relations in HD KaneType Semiconductors in the Presenceof Intense Electric Field
544
19 The DR Under Intense Electric Field in HD Kane Type Semiconductors
547
20 Few Related Applications
584
21 Conclusion and Scope for Future Research
615
Index
619
Copyright

Other editions - View all

Common terms and phrases