The Blue Laser Diode: The Complete StoryShuji Nakamura's development of a blue semiconductor laser on the basis of GaN opens the way for a host of new applications of semiconductor lasers. The wavelengths can be tuned by controlling the composition. For the first time it is possible to produce lasers with various wavelengths, ranging from red through yellow and green to blue, in one substrate material. This fact, together with their high efficiency, makes GaN-based lasers very useful for a wide spectrum of applications. The second edition of this basic book on GaN-based devices has been updated and significantly extended. It includes a survey of worldwide research on GaN, as well as Nakamura's latest important developments. The reader finds a careful introduction to the physics and properties of GaN. The main part of the book deals with the production and characteristics of GaN LDs and LEDs. To complete the spectrum of applications, GaN power devices are also described. |
Contents
I | 1 |
II | 3 |
III | 7 |
IV | 10 |
V | 11 |
VI | 13 |
VII | 15 |
VIII | 17 |
LXXVI | 161 |
LXXVIII | 166 |
LXXX | 167 |
LXXXI | 174 |
LXXXIII | 177 |
LXXXIV | 181 |
LXXXV | 183 |
LXXXVI | 184 |
IX | 20 |
X | 21 |
XI | 23 |
XII | 24 |
XIII | 29 |
XIV | 31 |
XVI | 32 |
XVIII | 34 |
XIX | 35 |
XX | 36 |
XXI | 38 |
XXIII | 41 |
XXVI | 42 |
XXVII | 47 |
XXVIII | 48 |
XXIX | 52 |
XXX | 54 |
XXXI | 59 |
XXXII | 65 |
XXXIV | 66 |
XXXV | 67 |
XXXVI | 75 |
XXXVIII | 76 |
XXXIX | 79 |
XL | 80 |
XLII | 88 |
XLIII | 89 |
XLIV | 90 |
XLV | 95 |
XLVIII | 96 |
XLIX | 101 |
L | 103 |
LI | 104 |
LIII | 108 |
LIV | 111 |
LV | 112 |
LVI | 113 |
LVII | 114 |
LVIII | 119 |
LIX | 120 |
LX | 121 |
LXI | 135 |
LXII | 136 |
LXIII | 137 |
LXIV | 140 |
LXV | 141 |
LXVI | 145 |
LXVII | 147 |
LXVIII | 149 |
LXIX | 150 |
LXX | 151 |
LXXII | 154 |
LXXIII | 155 |
LXXIV | 159 |
LXXV | 160 |
LXXXIX | 188 |
XCI | 193 |
XCIII | 194 |
XCV | 198 |
XCVI | 201 |
XCVII | 203 |
XCVIII | 207 |
XCIX | 209 |
CII | 214 |
CIII | 215 |
CIV | 216 |
CV | 217 |
CVI | 220 |
CVIII | 223 |
CIX | 224 |
CX | 225 |
CXI | 229 |
CXII | 230 |
CXIII | 237 |
CXIV | 239 |
CXV | 242 |
CXVII | 244 |
CXVIII | 247 |
CXX | 252 |
CXXI | 256 |
CXXII | 258 |
CXXIII | 262 |
CXXV | 268 |
CXXVI | 273 |
CXXVII | 279 |
CXXVIII | 281 |
CXXIX | 284 |
CXXX | 289 |
CXXXI | 291 |
CXXXII | 296 |
CXXXIII | 301 |
CXXXIV | 305 |
CXXXVI | 307 |
CXXXVII | 313 |
CXXXVIII | 314 |
CXXXIX | 319 |
CXL | 320 |
CXLI | 325 |
CXLII | 326 |
CXLIII | 328 |
CXLIV | 335 |
CXLV | 336 |
CXLVI | 339 |
CXLVII | 343 |
CXLVIII | 344 |
CXLIX | 345 |
CL | 347 |
361 | |
Other editions - View all
The Blue Laser Diode: The Complete Story Shuji Nakamura,Stephen Pearton,Gerhard Fasol Limited preview - 2013 |
The Blue Laser Diode: The Complete Story Shuji Nakamura,Stephen Pearton,Gerhard Fasol No preview available - 2010 |
Common terms and phrases
active layer AIN buffer Akasaki AlGaN AlInGaP Amano Appl band gap band-edge emission barrier layers blue emission blue LEDs carrier concentration crystal quality curve CW operation devices DL emission doping electron excitons external quantum efficiency facet flow rate forward current function FWHM GaAs gallium nitride GaN buffer layers GaN films grown GaN growth green SQW LEDs hydrogen III-V nitride indium mole fraction InGaN active layer InGaN films InGaN MQW LD Intensity a.u. IR-RTI laser diodes lattice LEEBI treatment Lett luminous intensity Mg-doped GaN films MOCVD N2-ambient thermal annealing Nakamura nmol/min obtained optical oscillation output power p-GaN p-n junction p-type GaN films p-type GaN layer peak wavelength Phys PL measurements pulsed current quantum dot ridge-geometry room temperature sample sapphire substrate Sect semiconductor Senoh shown in Fig shows Shuji Nakamura Si-doped InGaN films SiH4 spectrum stimulated emission structure substrate superlattices surface thickness Wavelength nm wurtzite zincblende μη