Silicon Carbide: Recent Major Advances

Front Cover
Wolfgang J. Choyke, Hiroyuki Matsunami, Gerhard Pensl
Springer Science & Business Media, Apr 17, 2013 - Technology & Engineering - 899 pages

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC. The book is divided into five main categories: theory, crystal growth, characterization, processing and devices. Every attempt has been made to make the articles as up-to-date as possible and assure the highest standards of accuracy. As was the case for earlier SiC books, many of the articles will be relevant a decade from now so that this book will take its place next to the earlier work as a permanent and essential reference volume.

 

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Contents

Zero and TwoDimensional Native Defects
3
VacancyMigration 5 1 Carbon and Silicon Vacancies
5
TwoDimensional Defects
14
Conclusion
22
FirstPrinciples Calculation of Defects Properties
29
Interstitial Migration
37
Annealing of Vacancies and Interstitials
47
Hydrogen in
56
Band Edge Absorption and Valence Band Splittings
417
Intrinsic Defects
421
Stacking Faults and NanoPolytypes
427
References
433
Band Structure and Effective Masses from ODCR Experiments
447
Conclusion
457
Paramagnetic and Photoluminescence Centers
463
DLTS of Intrinsic Defects
480

Results of Atomic Simulations
63
What Have We Learned about Hydrogen in
78
Electronic Properties of Stacking Faults
89
Isolated SFs in 3C 4H 6H and 15RSiC
95
Thin Cubic Inclusions in 4H and 6HSiC
109
43
116
References
117
Conclusions
133
46
136
Defect Formation and Reduction During Bulk SiC Growth
137
50
152
Growth Perpendicular to the cAxis Direction
153
63
158
Conclusion
160
The Increase of Conductivity in 4HSiC
169
66
173
Conclusion
176
StepFree Basal Plane Mesa Formation
185
StepFree Surface Heteroepitaxy of 3CSiC
193
Conclusion and Future Directions
198
LowDefect 3CSiC Grown on UndulantSi 001 Substrates
206
Properties of 3CSiC Grown on UndulantSi
217
Properties of 3CSiC Homoepitaxial Layer
223
New Development in Hot Wall Vapor Phase Epitaxial
229
New Generation of Hot Wall CVD Reactors
238
Future Development
248
Basic Considerations on the IBS of SiC in Si
254
Influence of Dose and Implantation Temperature
260
SiC Thin Films at the Surface and Deep in the Si Substrate
266
71
267
Conclusion
273
72
276
Atomic Structure of SiC Surfaces
279
Surface Reconstruction on SiC0001
289
Other Surface Orientations
305
References
311
The Continuum of InterfaceInduced Gap States
317
IFIGSandElectronegativity Theory
329
Conclusions
338
Origin and Models of SiCSiO2 Interface States
352
Alternative Insulators on SiC
362
Properties of Nitrided Oxides on
372
Characteristics of MOS Devices
381
Hall Effect Studies of Electron Mobility and Trapping
387
Using Hall Data to Calculate Dit E
399
References
409
Conclusion
487
PhosphorusRelated Centers in
493
IR Transmission Measurements on Phosphorus Donors in 6HSiC
499
Comparison of the Electrical Activation
507
References
513
Hall Scattering Factor
522
Conclusion
534
Selected Aspects of Radiotracer Deep Level Transient Spectroscopy
543
Summary and Conclusions
557
RadiationInduced Vacancy Defects in SiC
565
Conclusion
581
Detection of Stacking Faults in 4H and 6HSiC
590
Raman Scattering Related to Damages and Impurities
597
Conclusion
603
Applications of TEM Techniques to the Study
613
Conclusion
625
Characterization of SiC Heterostructures
638
Critical Review of Ohmic Contacts on 4HSiC
652
Conclusion
666
SiC Bulk Micromachining
676
SiC Micromolding
683
Wafer Bonding Techniques
690
Surface Preparation Techniques for SiC Wafers
699
References
708
Device Processing
722
References
731
SiC Power Bipolar Transistors and Thyristors
737
Conclusion
763
High Voltage 4HSiC Diodes
770
High Voltage 4HSiC FETs
776
Conclusion
782
OnResistance
791
Various Considerations
799
Process Integration
805
NormallyOff AccumulationMode
812
Key Device Processing Technologies
821
Application of MOS Based Power Devices in HEV Inverters
832
Development of SiC Devices for Microwave
839
Key Issues on the Way to SiC RF Power Device Industry
844
Perspectives
864
Detection Mechanism of Field Effect Gas Sensors
870
Experimental
885
Applications
886
References
893
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