GaN-Based Laser Diodes: Towards Longer Wavelengths and Short Pulses

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Springer Science & Business Media, Jan 3, 2012 - Technology & Engineering - 98 pages
The emergence of highly efficient short-wavelength laser diodes based on the III-V compound semiconductor GaN has not only enabled high-density optical data storage, but is also expected to revolutionize display applications. Moreover, a variety of scientific applications in biophotonics, materials research and quantum optics can benefit from these versatile and cost-efficient laser light sources in the near-UV to green spectral range. This thesis describes the device physics of GaN-based laser diodes, together with recent efforts to achieve longer emission wavelengths and short-pulse emission. Experimental and theoretical approaches are employed to address the individual device properties and optimize the laser diodes toward the requirements of specific applications.
 

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Contents

1 Introduction
1
2 Basic Concepts
5
3Thermal Properties
20
4 Light Propagation and Amplification in Laser Diodes from Violet to Green
29
5 Semipolar Crystal Orientations for Green Laser Diodes
37
6 Dynamics of Charge Carriers and Photons
55
7 ShortPulse Laser Diodes
67
A1Numerical Solution of the Quantum Well Schrödinger Equation
89
A24times4 Transfer Matrix Waveguide Calculation
90
A24times4 Transfer Matrix Waveguide Calculation
92
Curriculum Vitae
93
Journal Papers
94
Conference Contributions
95
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