Physical Models of Semiconductor Quantum Devices
The science and technology relating to nanostructures continues to receive significant attention for its applications to various fields including microelectronics, nanophotonics, and biotechnology.
This book describes the basic quantum mechanical principles underlining this fast developing field.
From the fundamental principles of quantum mechanics to nanomaterial properties, from device physics to research and development of new systems, this title is aimed at undergraduates, graduates, postgraduates, and researchers.
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absorption coefﬁcient AlGaAs AlGaAs/GaAs Appl Phys Lett approximation atoms axis bandgap barrier bias VD Bloch Bloch function calculate cm_3 conduction band conduction bandedge conduction channel conduction-band conﬁned conﬁnement Coulombic crystal deﬁned denotes density devices doping effective mass eigen electric ﬁeld electromagnetic ﬁeld electron and hole emission emitter energy band energy band structure envelope function epitaxial excited exciton external bias Fermi level ﬁlm ﬁrst ﬁrst-order GaAs quantum growth direction Hamiltonian heterostructure impurity infrared photodetector integral interaction ionized laser lattice layer metal MOSFET n-type nanostructures normally obtain optical transition parameters perturbation photocurrent photodetector photon Phys Rev quantum dot quantum wire radiation reﬂected region resonant tunneling resonant tunneling diode scattering Schematic Schrodinger equation semiconductor materials spatial strain sublevel substrate superlattice transistor transport tunneling diode unit cell valence band varactor wave function wave packet wave vector wavelength Willander xy plane zero